Electrical Instability of CdTe:Si Crystals
| Autor: | Ye. S. Nykoniuk, P. M. Fochuk, S. V. Solodin, M. O. Kovalets, Z. I. Zakharuk, O. E. Panchuk |
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| Jazyk: | English<br />Ukrainian |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Фізика і хімія твердого тіла, Vol 18, Iss 1, Pp 29-33 (2018) |
| Druh dokumentu: | article |
| ISSN: | 1729-4428 2309-8589 |
| DOI: | 10.15330/pcss.18.1.29-33 |
| Popis: | Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impurity states are realized. We have found the distinction between 3 type of CdTe:Si crystals: (1) low-resistance p-type crystals with shallow acceptors, in which Si impurity is localized mainly in the large inclusions; (2) semi-insulating crystal with deep acceptors and submicron size dopant precipitates that are source/drain for interstitials Sii - shallow donors; and (3) low-resistance crystals in which the n-type conductivity is provided by shallow donors: Sii (and/or SiCd). Therefore the silicon is responsible for n-type conductivity of doped samples, introducing as a donor Siі and provides semi-insulating state by forming deep acceptor complexes (SiCd-VCd2-)- with (Еv + 0.65 eV). Besides, the submicron silica precipitates, that have a tend to "dissolution" at relatively low temperatures, can act as electrically active centers. Keywords: cadmium telluride, silicon, doping, electrical properties, impurity, precipitates. |
| Databáze: | Directory of Open Access Journals |
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