| Autor: |
Congyu Hu, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Qixin Guo |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 9, Iss 8, Pp 085022-085022-4 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5118700 |
| Popis: |
Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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