| Autor: |
Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 14, Iss 9, p 753 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst14090753 |
| Popis: |
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in which growth temperatures and surface treatments of the substrate are two key factors that contribute to the uniformity and composition of the HfO2 thin films. A remarkable asymmetry observed in capacitance versus voltage measurements was linked to the interface defects and charge redistribution, as confirmed from X-ray photoelectron spectroscopy. The GaAs substrates that were etched with only NH4OH showed a large frequency dispersion and a higher surface roughness; however, the HfO2 thin films grown on GaAs pre-treated with both NH4OH etching and (NH4)2S passivation steps produced a desirable surface and superior electronic properties. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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