Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Autor:	Caihong Jia, Jiachen Li, Guang Yang, Yonghai Chen, Weifeng Zhang
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Ferroelectric Asymmetric resistive switching Ferroelectric/semiconductor heterojunctions Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
DOI:	10.1186/s11671-018-2513-6
Popis:	Abstract Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/479ec0543d0f483c837259e85b2ce08a Zobrazit plný text záznamu Full text from SpringerLink View record in DOAJ