| Autor: |
Christian Sbrana, Alessandro Catania, Maksym Paliy, Stefano Di Pascoli, Sebastiano Strangio, Massimo Macucci, Giuseppe Iannaccone |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 12, Pp 57236-57249 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2024.3387714 |
| Popis: |
In this paper, we discuss the challenges at the device and circuit level that must be addressed to design reliable silicon CMOS integrated circuits operating in high-temperature environments. We present experimental results on representative devices fabricated with a 180 nm CMOS SOI platform, which have been characterized up to 300°C, discuss issues arising at high temperature, and propose possible solutions. A BJT-based temperature sensor core is also described and evaluated across the same extended temperature range. We also propose and discuss design criteria optimized for a wide range of operating temperature. A sufficient on/off current ratio can be achieved by taking advantage of the isolation provided by low-leakage CMOS SOI process, while operation at low current density must be ensured to mitigate electromigration effects. Within these conditions, low-power precise sensing circuits can be effectively implemented with operating temperature up to 300°C, that are extremely relevant for industrial, mobility, and space applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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