Evaluation of accuracy of SiC-JFET macromodel

Autor: Bargieł Kamil, Bisewski Damian
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: ITM Web of Conferences, Vol 19, p 01027 (2018)
Druh dokumentu: article
ISSN: 2271-2097
DOI: 10.1051/itmconf/20181901027
Popis: In the paper, the results of experimental verification of the macromodel of UJN1208K JFET transistor made of silicon carbide fabricated by United Silicon Carbide, are presented. The macromodel form dedicated for PSPICE program is available on the manufacturer's website. The accuracy of the macromodel have been evaluated by comparison of selected calculated and measured static characteristics and C-V characteristics of the considered transistor. The influence of ambient temperature on the characteristics of the transistor has been evaluated, as well.
Databáze: Directory of Open Access Journals