Autor:	Nelin E. A.
Jazyk:	English<br />Russian
Rok vydání:	2009
Předmět:	nanoelectronics resonant tunneling of electrons crystal-like structure Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 30-37 (2009)
Druh dokumentu:	article
ISSN:	2225-5818
Popis:	Analytical expressions for resonant parametres and characteristics of typical barrier nanoelectronic structures have been received on the basis of the transmission line model. Characteristics illustrating the efficiency of such approach are presented in the article.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/46ed22cf6bed457d87c59f6c1e49e358 Zobrazit plný text záznamu View record in DOAJ