| Autor: |
H. Wang, Z. R. Liu, H. Y. Yoong, T. R. Paudel, J. X. Xiao, R. Guo, W. N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian, J. S. Chen |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-018-05662-y |
| Popis: |
High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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