| Autor: |
Jiaqi Zhang, Weihang Zhang, Jing Wan, Guofang Yang, Yichang Wu, Ya’nan Cheng, Yachao Zhang, Dazheng Chen, Shenglei Zhao, Jincheng Zhang, Chunfu Zhang, Yue Hao |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 10, Pp 105112-105112-5 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0066189 |
| Popis: |
In this work, a novel reverse blocking Schottky-drain Si–GaN monolithic integrated cascode FET was realized for the first time by using transfer printing and self-aligned etching technology. The threshold voltage is up to 4.5 V, which meets the needs of the power electronic system. The on-resistance is 57.1 Ω mm, and the on-voltage is 1.1 V. The forward/reverse breakdown voltage (at 10 µA/mm) reaches 1325/−1240 V for LGD = 18 µm. The mechanism of reverse blocking is proposed and analyzed from the point of view of circuits. In addition, the correctness of the mechanism is verified by simulation and experiment. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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