Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

Autor: Matthew S. Wong, Philip Chan, Norleakvisoth Lim, Haojun Zhang, Ryan C. White, James S. Speck, Steven P. Denbaars, Shuji Nakamura
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Crystals, Vol 12, Iss 5, p 721 (2022)
Druh dokumentu: article
ISSN: 2073-4352
DOI: 10.3390/cryst12050721
Popis: In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm2 for device dimensions from 5 × 5 to 100 × 100 µm2. The µLEDs emit at 692 nm at 5 A/cm2 and 637 nm at 100 A/cm2, corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of µLEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red µLEDs can be realized with further material optimizations.
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