| Autor: |
Chi-Cheng Lai, R. C. Pan, I-Hsiang Wang, T. George, Horng-Chih Lin, Pei-Wen Li |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 54-59 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3235386 |
| Popis: |
We report the fabrication and electrical characterization of single-hole transistors (SHTs), in which a Ge spherical quantum dot (QD) weakly couples to self-aligned electrodes via self-organized tunnel barriers of Si3N4. A combination of lithographic patterning, sidewall spacers, and self-assembled growth was used for fabrication. The core experimental approach is based on the selective oxidation of poly-SiGe spacer islands located at the specially designed included-angle locations of Si3N4/Si-trenches. By adjusting processing times for conformal deposition, etch back and thermal oxidation, good tunability in the Ge QD size and its tunnel-barrier widths were controllably achieved. Each Ge QD is electrically addressable via self-aligned Si gate and reservoirs, thus offering an effective building block for implementing single-charge devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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