Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates
| Autor: | Y. Gu, W. G. Huang, J. Zhang, X. Y. Chen, Y. J. Ma, H. Huang, G. X. He, Y. G. Zhang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | AIP Advances, Vol 8, Iss 12, Pp 125318-125318-6 (2018) |
| Druh dokumentu: | article |
| ISSN: | 2158-3226 46700501 |
| DOI: | 10.1063/1.5051062 |
| Popis: | This work reports on the approach of metamorphic In(Ga)As quantum wells on GaP/Si(001) substrates for Si-based mid-infrared applications. Metamorphic InP and In0.83Al0.17As templates are grown on Si, and room temperature photoluminescence emissions at 2.1 μm and 2.6 μm have been demonstrated from InAs/In0.53Ga0.47As triangular quantum wells and InAs quantum wells on the templates, respectively. The surface root mean square roughness is 4-5 nm. The quantum wells act fully strained and the threading dislocation density is 107-108 cm-2 in the upper side of buffer. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|