Quantum simulation of the Hubbard model with dopant atoms in silicon

Autor: J. Salfi, J. A. Mol, R. Rahman, G. Klimeck, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/ncomms11342
Popis: The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.
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