Investigation of electronic structure of Zr1-xVxNiSn semiconductive solid solution
| Autor: | Yuriy Stadnyk, Vitaliy Romaka, Vladimir Romaka, Andriy Horyn, Lyubov Romaka, Vladimir Krayovskyy, Ivanna Romaniv |
|---|---|
| Jazyk: | English<br />Ukrainian |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Фізика і хімія твердого тіла, Vol 20, Iss 2, Pp 127-132 (2019) |
| Druh dokumentu: | article |
| ISSN: | 1729-4428 2309-8589 |
| DOI: | 10.15330/pcss.20.2.127-132 |
| Popis: | The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0-0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor and acceptor levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|