Autor: |
Liuhui Lei, Wei Dou, Xiaomin Gan, Jia Yang, Wei Hou, Xing Yuan, Weichang Zhou, Dongsheng Tang |
Jazyk: |
angličtina |
Rok vydání: |
2023 |
Předmět: |
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Zdroj: |
Results in Physics, Vol 51, Iss , Pp 106764- (2023) |
Druh dokumentu: |
article |
ISSN: |
2211-3797 |
DOI: |
10.1016/j.rinp.2023.106764 |
Popis: |
Coprous thiocyanate (CuSCN)-based thin-film transistors (TFTs) by solution-processed chitosan electrolyte are fabricated on glass substrates. Such TFTs show a low operation voltage of −2.0 V due to the large specific gate capacitance of 7.65 μF/cm2 related to electric-double-layer (EDL) formation. The threshold voltage, drain current on/off ratio and field-effect mobility are estimated to be 0.28 V, 2.0 × 103 and 0.11 cm2V−1s−1, respectively. The threshold voltage of CuSCN-based TFTs shifts significantly after laser or annealing treatment. Moreover, this work implements NAND logic function on CuSCN-based TFTs for the first time. These results offer new possibilities in the development of inorganic p-type semiconductors and single-device logic applications. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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