| Autor: |
Lert Chayanun, Susanna Hammarberg, Hanna Dierks, Gaute Otnes, Alexander Björling, Magnus T Borgström, Jesper Wallentin |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 9, Iss 8, p 432 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst9080432 |
| Popis: |
The advent of nanofocused X-ray beams has allowed the study of single nanocrystals and complete nanoscale devices in a nondestructive manner, using techniques such as scanning transmission X-ray microscopy (STXM), X-ray fluorescence (XRF) and X-ray diffraction (XRD). Further insight into semiconductor devices can be achieved by combining these techniques with simultaneous electrical measurements. Here, we present a system for electrical biasing and current measurement of single nanostructure devices, which has been developed for the NanoMAX beamline at the fourth-generation synchrotron, MAX IV, Sweden. The system was tested on single InP nanowire devices. The mechanical stability was sufficient to collect scanning XRD and XRF maps with a 50 nm diameter focus. The dark noise of the current measurement system was about 3 fA, which allowed fly scan measurements of X-ray beam induced current (XBIC) in single nanowire devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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