| Autor: |
Kalyan Mondol, Md. Manzurul Hasan, Yeasir Arafath, Khairul Alam |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Results in Physics, Vol 6, Iss , Pp 339-341 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2211-3797 |
| DOI: |
10.1016/j.rinp.2016.06.002 |
| Popis: |
We investigate the quantization effects on the gate capacitance and charge distribution of a double gate MOSFET using a self-consistent solution of Poisson and Schrödinger equations of the industry standard simulation package Silvaco. Quantization effects on the gate C–V are simulated by varying the electron and hole effective masses. We notice that the inversion capacitance value decreases as the effective mass goes below 0.1mo and the shape of the C–V curve changes to step like in the inversion. We also notice that the inversion switches from surface inversion to volume inversion for low effective mass, and the quantization effect (step like shape) in C–V and volume inversion in charge profile happen at the same effective mass. Keywords: Double gate MOSFETs, Quantum effects, Energy quantization, Channel inversion, Charge density |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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