THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP

Autor:	B. A. Shangereeva
Jazyk:	ruština
Rok vydání:	2016
Předmět:	film hydrogen oxygen oxidation material adsorption oxidant surface diffusion oxide process semiconductors thermal oxidation pyrolytic deposition adhesion and formation Technology
Zdroj:	Вестник Дагестанского государственного технического университета: Технические науки, Vol 29, Iss 2, Pp 26-33 (2016)
Druh dokumentu:	article
ISSN:	2073-6185 2542-095X
DOI:	10.21822/2073-6185-2013-29-2-26-33
Popis:	Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plasma anodizing or oxidation.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/44df0033961f4c48ae1aca3c21e58314 Zobrazit plný text záznamu View record in DOAJ