Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition
| Autor: | Yuxin An, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao, Zhengcheng Li, Gang Niu, Jinping Zhang, Zhiyong Quan, Sunan Ding |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Journal of Advanced Dielectrics, Vol 9, Iss 4, Pp 1950032-1-1950032-7 (2019) |
| Druh dokumentu: | article |
| ISSN: | 2010-135X 2010-1368 2010135X |
| DOI: | 10.1142/S2010135X19500322 |
| Popis: | In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5Pa. To further improve the quality of hetero-epitaxial β-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600–750∘C exhibit a clear absorption edge at deep ultraviolet region around 250–275nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that β-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices. |
| Databáze: | Directory of Open Access Journals |
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