| Autor: |
Kadiyam Rajshekar, Hsiao-Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun-Hu Cheng, D. Kannadassan |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 8, Pp 948-958 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2020.3018463 |
| Popis: |
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high ION/IOFF ratio of > 106, low subthreshold swing of ~100 mV/dec and high field-effect mobility (μFE) of 4.8 cm2V-1s-1. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p-type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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