| Autor: |
Ching-Yi Hsu, Chun-Yen Chang, Edward Yi Chang, Chenming Hu |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 60-65 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2015.2514060 |
| Popis: |
Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen the uniformity. We propose a dual-metal gate structure to address the non-uniformity issue. With proper choice of work functions, the dual-metal gate structure can effectively suppress the early onset of edge tunneling and significantly improve the subthreshold swing. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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