| Autor: |
Yuanlin Liang, Haisheng Chen, Dianmeng Dong, Jiaxing Guo, Xiaona Du, Taiyu Bian, Fan Zhang, Zhenping Wu, Yang Zhang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Energies, Vol 17, Iss 6, p 1397 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1996-1073 |
| DOI: |
10.3390/en17061397 |
| Popis: |
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga2O3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3 (Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of crystalline Ga2O3: Er thin film is strongly enhanced over 100 times that of the amorphous Ga2O3: Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3 thin films. |
| Databáze: |
Directory of Open Access Journals |
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