Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability
| Autor: | N. V. Komarovskih, L. V. Fomina, S. A. Beznosyuk |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Chimica Techno Acta, Vol 2, Iss 1, Pp 78-87 (2015) |
| Druh dokumentu: | article |
| ISSN: | 2409-5613 2411-1414 |
| DOI: | 10.15826/chimtech.2015.2.1.008 |
| Popis: | In this work the study of the stability nanochips GaAs / GaAsxNy / GaN is presented. For the calculation of parameters used quantum-chemical and thermodynamic approaches. The calculations of the surface free energy nanochips within the models used show that a significant contribution to the crystalline structure stability of the GaN layer is the molar concentration of nitrogen atoms in the intermediate layer GaAsxNy nanochips GaAs / GaAsxNy / GaN. |
| Databáze: | Directory of Open Access Journals |
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