| Autor: |
A. H. Sohrabi, N. V. Gaponenko, M. V. Rudenko, S. M. Zavadski, D. A. Golosov, A. F. Guk, V. V. Kolos, A. N. Pyatlitski, A. S. Turtsevich |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 28-31 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The average values of the dielectric permittivity, ε, and the loss factor, tg δ, were found between 150-190 and 0,06-0,1 respectively. The standard deviation values of the mentioned characteristics were calculated. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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