Preparation and properties of – ceramics and polycrystalline films

Autor: K. M. Zhidel, A. V. Pavlenko
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Journal of Advanced Dielectrics, Vol 12, Iss 01 (2022)
Druh dokumentu: article
ISSN: 2010135X
2010-1368
2010-135X
DOI: 10.1142/S2010135X2160002X
Popis: In this paper, we report the successful growth of 0.5BiFeO3–0.5[Formula: see text][Formula: see text]O3/SrTiO3/Si(001) heterostructure using RF-cathode sputtering in an oxygen atmosphere. The deposited films have been investigated by X-ray diffractometry and spectroscopic ellipsometry (SE). 0.5BiFeO3–0.5[Formula: see text][Formula: see text]O3 films on silicon substrates with a strontium titanate buffer layer are single-phase, polycrystalline with a texture in the 001 direction. The unit cell parameters calculated in the tetragonal approximation were [Formula: see text] = 4.005 ± 0.001 [Formula: see text]; [Formula: see text] = 3.995 ± 0.001 [Formula: see text]. The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed. Dielectric properties and capacitance-voltage characteristics have been measured. The ellipsometric parameters have been obtained.
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