| Autor: |
Chris Yeajoon Bon, Dami Kim, Kanghyuk Lee, Sungjoon Choi, Insung Park, Sang-Im Yoo |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 11, Pp 115117-115117-6 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0024783 |
| Popis: |
We report enhanced electrical properties of metal–insulator–metal (MIM) capacitors consisting of Al (100 nm)/Nb-doped a-HfO2 (∼30 nm)/Pt (100 nm) on a p-type silicon wafer, where Nb-doped amorphous HfO2 (a-HfO2) layers were deposited by radio frequency magnetron sputtering in various low oxygen partial pressures at room temperature. Polycrystalline HfO2 targets with three different Nb contents of 0 mol. %, 6 mol. %, and 10 mol. % were used in this study. Compared with the leakage current of the undoped a-HfO2 film (∼1.1 × 10−8 A cm−2 at 1 V), greatly reduced leakage currents (∼3.7 × 10−10 A cm−2 at 1 V) with no significant alteration in the dielectric constants (∼22) were obtainable from the MIM samples composed of Nb-doped a-HfO2 films, which is attributable to the suppression of oxygen vacancy formation based on the XPS analysis results. The Nb-doped a-HfO2 dielectric thin films also exhibited improved voltage nonlinearity compared to undoped HfO2. These results indicate that Nb-doped a-HfO2 has potential application as a high-κ dielectric material in MIM capacitors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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