Atomic layer etching of graphene through controlled ion beam for graphene-based electronics

Autor: Ki Seok Kim, You Jin Ji, Yeonsig Nam, Ki Hyun Kim, Eric Singh, Jin Yong Lee, Geun Young Yeom
Jazyk: angličtina
Rok vydání: 2017
Předmět:
Zdroj: Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Druh dokumentu: article
ISSN: 2045-2322
DOI: 10.1038/s41598-017-02430-8
Popis: Abstract The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful technique due to barely no damage and no contamination. In this study, we demonstrated the ALE process of graphene layers without noticeably damaging the graphene by using a controlled low energy oxygen (O2 +/O+)-ion for chemical adsorption and a low energy Ar+-ion (11.2 eV) for physical desorption. In addition, using a trilayer graphene, mono- and bi-layer graphene could be successfully fabricated after one- and two-cycle ALE of the trilayer graphene, respectively. We believe that the ALE technique presented herein can be applicable to all layered materials such as graphene, black phosphorous and transition metal dichalcogenides which are important for next generation electronic devices.
Databáze: Directory of Open Access Journals
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