| Autor: |
Yuqian Wang, Guanghui Cai, Zhanfen Chen, Huining Peng, Qinghua Zhang, Lei Gao, Mingtong Zhu, Xiangyu Lyu, Chao Lu, Jin Liu, Mengcheng Li, Keyue Liang, Pengyu Liu, Lu Wang, Huayu Tao, Jiayi Song, Qiang Wang, Ailing Ji, Miao Liu, Chaorong Li, Lin Gu, Pu Yu, Zexian Cao, Nianpeng Lu |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2199-160X |
| DOI: |
10.1002/aelm.202400029 |
| Popis: |
Abstract Realizing transformation from transparent insulating to transparent conducting, is a pursuing goal in designing and fabricating novel optoelectronic materials and devices. Here, a pronounced insulating to metal transition in anatase TiO2 thin films is achieved through ionic liquid gating, and interestingly the material maintains an invariable high optical transparency. It is revealed that the emergent metallic state can be attributed to the electron doping associated with the hydrogen ion intercalation. Importantly, the hydrogenation leads to the almost rigid shift of the Fermi energy and therefore maintains nicely the transparency at the visible light region. This result is in strong contrast with the case of oxygen vacancy doping, in which the optical bandgap is suppressed due to improved orbitals hybridization and intraband transition. Moreover, through synergistic ion‐electron doping, the selective control of the gating area and pattern is realized in the micrometer or even nanometer scale with extremely distinct physical properties, which can be employed to fabricate novel optical and electronic devices. The result greatly deepens the understanding of the underlying physics and formation mechanism of transparent conducting oxide (TCO) materials. It is envisioned that this work would provide a new pathway to design other potential optoelectronic materials with novel functionalities. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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