| Autor: |
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 13, Iss 11, p 1786 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano13111786 |
| Popis: |
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges. For example, the gate length cannot be precisely controlled, and the gate and the source/drain of the device cannot be aligned. Recrystallization-based vertical C-shaped-channel nanosheet field-effect transistors (RC-VCNFETs) were fabricated. The critical process modules of the RC-VCNFETs were developed as well. The RC-VCNFET with a self-aligned gate structure has excellent device performance, and its subthreshold swing (SS) is 62.91 mV/dec. Drain-induced barrier lowering (DIBL) is 6.16 mV/V. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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