| Autor: |
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler, Diana Y. Qiu, Artem Pulkin, Sebastian Wickenburg, Hyejin Ryu, Miguel M. Ugeda, Christoph Kastl, Christopher Chen, Choongyu Hwang, Adam Schwartzberg, Shaul Aloni, Sung-Kwan Mo, D. Frank Ogletree, Michael F. Crommie, Oleg V. Yazyev, Steven G. Louie, Jeffrey B. Neaton, Alexander Weber-Bargioni |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-019-11342-2 |
| Popis: |
The nature of defects in transition metal dichalcogenide semiconductors is still under debate. Here, the authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalcogen atom is substituted by an oxygen atom, rather than vacancies. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
