| Autor: |
Qiang Ma, Shiyo Urano, Atsushi Tanaka, Yuji Ando, Akio Wakejima |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 297-300 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2022.3163379 |
| Popis: |
This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (Vds) of 30 V, which was confirmed with combination of a top-side view using a CMOS sensor camera and a back-side view using a silicon-intensified CCD. As Vds was increased to 48 V, color change from low-intensity red to high-intensity white was accompanied with shift of the location from the gate to the drain edge. The changes in the EL are attributed to a shift of the high electric field from the gate to the drain electrode and a concentration of electric field near the drain edge. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
