| Popis: |
Abstract Self-rectifying memristive devices have emerged as promising contenders for low-power in-memory computing, presenting numerous advantages. However, characterizing the functional behavior of passive crossbar arrays incorporating these devices remains challenging due to sophisticated parasitic currents stemming from rich memristive dynamic behavior. Conventional methods using read margin assessments to evaluate functional behavior in passive crossbars are hindered by the voltage divider effect from the pull-up resistor. In this study, we propose a novel performance metric, $$\Delta$$ Δ SC, harnessing sneak path currents to assess functional behavior. Through the application of a pair of negative rectification factors, $$\text {RF}_\text {n, L}$$ RF n, L and $$\text {RF}_\text {n, H}$$ RF n, H , we comprehensively delineate dynamic rectification behavior in both positive and negative bias regimes, as well as in low-resistance state and high-resistance state, deviating from conventional metrics such as on/off ratios, nonlinearity, and rectifying factors. Notably, $$\Delta$$ Δ SC provides a quantitative evaluation of the interaction between sneak path currents and read margin, demonstrating its efficacy and addressing a pivotal research gap in the field. For instance, employing self-rectifying BiFeO $$_3$$ 3 memristive cells featuring $$\text {RF}_\text {n, L}$$ RF n, L = 1.22E3 and $$\text {RF}_\text {n, H}$$ RF n, H = 9.27, we showcase the successful functional performance of a passive crossbar array, achieving $$\Delta$$ Δ SC < 2.19E−2, while ensuring a read margin > 0. |
