The use of a six-punch high-pressure apparatus for growing instrumental diamond single crystals
| Autor: | T.S. Panasiuk, О.О. Leshchuk, V.V. Lysakovskyi, S.О. Ivakhnenko, O.V. Bovsunivskyi, V.Yu. Klochok |
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| Jazyk: | English<br />Ukrainian |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Технічна інженерія, Vol 2, Iss 48, Pp 43-50 (2019) |
| Druh dokumentu: | article |
| ISSN: | 2706-5847 2707-9619 |
| DOI: | 10.26642/ten-2019-2(84)-43-50 |
| Popis: | At present, the task of industrial growing of diamond single crystals of instrumental purpose using six-punch cubic-type high-pressure apparatuses has been actively studied. Experimental determination of the temperature distribution in the growth volume takes a lot of time and effort, so it is rational to use computer modeling. Using the ANSYS Workbench software package, a three-dimensional numerical simulation of the resistance heating processes of a six-punch HPA was developed and its testing was carried out using the example of spontaneous synthesis of diamond crystals in such an apparatus. The temperature fields of the growth cell of a six-punch high-pressure apparatus were calculated for growing diamond single crystals by the temperature gradient method, on the basis of which an optimal scheme for heating the growth volume was developed. Experiments were carried out on the growth of diamond single crystals in a six-punch HPA with a cycle time from 48 to 96 hours and the characteristics of the obtained crystals are given. |
| Databáze: | Directory of Open Access Journals |
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