| Autor: |
Hui Dong, Junzheng Mu, Jinfeng Peng, Xuejun Zheng, Liang Chu |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
iScience, Vol 27, Iss 10, Pp 110819- (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2589-0042 |
| DOI: |
10.1016/j.isci.2024.110819 |
| Popis: |
Summary: The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS2 nanosheets were oxidized to form MoS2-MoO3 local heterojunctions by an electric field, applied in multistable memristors for the proposal of NanoQR code. A modified thermal oxidation model was derived to reveal the mechanism of local electric oxidation on 2D MoS2. From current-voltage curves, the barrier height of the MoS2 device showed an increase of 0.39 eV due to local oxidation after applying voltage for 480 s. Based on density-functional theory, the increase of barrier height was calculated as 0.38 eV between MoS2-MoS2 and MoS2-MoO3 supercells. The 2D MoS2-MoO3 local heterojunctions were further applied as multistable memory storage at the nanoscale. The findings suggest a novel strategy for controlling local electric oxidation on 2D TMDs to manipulate the properties for the application of photoelectric memory nanodevices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
