| Autor: |
M. Z. M. Khan, T. K. Ng, B. S. Ooi |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 6, Iss 4, Pp 1-8 (2014) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2014.2337892 |
| Popis: |
We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
