Autor: |
Wen Yu, Dongyan Zhao, Jian Cai, Yubo Wang, Haifeng Zhang, Yanning Chen, Yidong Yuan, Zhen Fu, Shuaipeng Wang, Tiantian Wei, Yi Wang, Dedong Han |
Jazyk: |
angličtina |
Rok vydání: |
2019 |
Předmět: |
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Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1302-1305 (2019) |
Druh dokumentu: |
article |
ISSN: |
2168-6734 |
DOI: |
10.1109/JEDS.2019.2951738 |
Popis: |
In order to explore the influence of interlayer between dielectric layer and channel layer on performance of thin film transistors (TFTs), the single layer titanium doped zinc oxide (TiZO) TFTs and the dual layer indium tin oxide (ITO)/TiZO TFTs were fabricated successfully in this work. The effects of interlayer thickness on the performance of TFTs were studied and the optimal thickness condition was obtained. The experimental results indicate that the introduction of interlayer contributes to the improvement of TFT characteristics. In addition, the dual-layer ITO/TiZO TFTs also present a good uniformity, which is suitable for large-area display applications. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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