| Autor: |
ZHANG Fuqiang, CHEN Qiming, GONG Yihao, XIAO Shuyan, ZHANG Zheng, MA Xu, ZHAO Shuyong, ZHENG Hongchao, ZHANG Jianpeng, GUO Gang |
| Jazyk: |
čínština |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Fushe yanjiu yu fushe gongyi xuebao, Vol 41, Iss 6, Pp 060703-060703 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
1000-3436 |
| DOI: |
10.11889/j.1000-3436.2022-0120&lang=zh |
| Popis: |
The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature and total dose on TID. The results indicated that within a certain range, the dose rate had little influence on the TID of the device. The larger the characteristic size of the device, the greater TID effect, while the higher temperature, the weaker the total dose effect. In addition, the typical dose rate and the uniformity of the source are achieved. The research of the paper provide an insight into radiation hardening, particularly in the aerospace and the nuclear industries. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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