Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
| Autor: | P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk, V.I. Glotov, V.V. Strelchuk |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 3, Pp 330-334 (2017) |
| Druh dokumentu: | article |
| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo20.03.330 |
| Popis: | The influence of porous alumina template morphology on silicon films growth at deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed at deposition. After two-stage anodization, the porous alumina has tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics and ionics devices. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|