| Autor: |
Fayssal Mekaret, Abdelaziz Rabehi, Baya Zebentout, Shahrazade Tizi, Abdelmalek Douara, Stefano Bellucci, Mawloud Guermoui, Zineb Benamara, El-Sayed M. El-kenawy, Marwa M. Eid, Amel Ali Alhussan |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 14, Iss 11, Pp 115302-115302-14 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0240123 |
| Popis: |
This study undertakes a comparative analysis of Schottky diodes using three prominent SiC polytypes (3C, 4H, and 6H). The comparison involves meticulous calculations of the Schottky barrier resulting from the metal/SiC interface for each polytype assessed in both practical and theoretical scenarios. Specifically, the barrier height (ΦB) is systematically plotted against the metal work function (ΦM) across a range of metal work functions from 3.65 to 5.65 eV. Furthermore, the investigation extends to the saturation currents of three distinct charge transport models for each SiC polytype: thermionic current (TE), thermionic field emission, and field emission. Initial analyses plot saturation currents as a function of concentration within a temperature range of 100–500 K. Subsequent examinations plot saturation currents as a function of temperature across a concentration gradient from 1014 to 1020 cm−3. The comparison between the activation energy and thermal energy at standard room temperature (T = 300 K) yielded results consistent with theoretical predictions, affirming the robustness and applicability of each model within its dominant range. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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