| Autor: |
Yuki Hibino, Tatsuya Yamamoto, Kay Yakushiji, Tomohiro Taniguchi, Hitoshi Kubota, Shinji Yuasa |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2199-160X |
| DOI: |
10.1002/aelm.202300581 |
| Popis: |
Abstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for the semiconductor integration process. Thus far, none of the crystalline‐based spin Hall materials are able to satisfy these requirements. Here, a promising solution for SOT‐MRAMs is provided using amorphous W─Ta─B alloys. Even without a long‐range crystal order, W─Ta─B alloys exhibit both large effective spin Hall angles up to 40% derived from a Ta substitutional doping and superior annealing stability (up to 400 °C) due to the addition of B, enabling them to satisfy both requirements. Nanoscale three‐terminal SOT‐MRAM cells are fabricated, and these are demonstrated to have high magnetoresistance ratios (up to 130%) and extremely low intrinsic switching current densities (down to 4 × 106 A cm−2). These results show that amorphous spin Hall materials can provide the key for realizing high‐performance SOT‐MRAMs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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