Autor: |
Michiel Gidts, Wei-Fan Hsu, Maria Recaman Payo, Shaswat Kushwaha, Frederik Ceyssens, Dominiek Reynaerts, Jean-Pierre Locquet, Michael Kraft, Chen Wang |
Jazyk: |
angličtina |
Rok vydání: |
2024 |
Předmět: |
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Zdroj: |
Microsystems & Nanoengineering, Vol 10, Iss 1, Pp 1-12 (2024) |
Druh dokumentu: |
article |
ISSN: |
2055-7434 |
DOI: |
10.1038/s41378-024-00807-0 |
Popis: |
Abstract Cr-doped V2O3 thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped V2O3 thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped V2O3 thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped V2O3 thin film piezoresistors with external strain change was measured. With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature, isotropic piezoresistivity coefficients were discovered. This results in a significant orientation-independent resistance change with stress for Cr-doped V2O3 thin film piezoresistors, potentially useful for new sensor applications. To demonstrate the integration of this new piezoresistive material in sensor applications, a micromachined pressure sensor with Cr-doped V2O3 thin film piezoresistors was designed, fabricated and characterized. At 20 °C, a sensitivity, offset, temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar, -25.73 mV/V, -0.076 mV/V/bar/°C and 0.182 mV/V/°C, respectively, were measured. This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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