| Autor: |
S. Pati Tripathi, S. Bonen, A. Bharadwaj, T. Jager, C. Nastase, S. Iordanescu, G. Boldeiu, M. Pasteanu, A. Nicoloiu, I. Zdru, A. Muller, S. P. Voinigescu |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 600-610 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2022.3176205 |
| Popis: |
A compact analytical model is proposed along with a parameter extraction methodology to accurately capture the steady-state (DC) sequential tunneling current observed in the subthreshold region of the transfer $I_{DS}-V_{GS}$ characteristics of MOSFETs at cryogenic temperatures. The model is shown to match measurements of $p$ -MOSFETs and $n$ -MOSFETs manufactured in a commercial 22nm FDSOI foundry technology, with reasonable accuracy across bias conditions and temperature (2 K - 50 K). Furthermore, the extracted model parameters are used to analyze the impact of the gate and drain voltages and of layout geometry on the device characteristics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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