| Autor: |
Qing Zhu, Jiatong Fan, Yuxiang Wei, Zhan Wang, Jiejie Zhu, Jing Sun, Zhenni Wang, Xichen Wang, Ling Yang, Shaojie Song, Yimin Lei, Xiaohua Ma |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Journal of Materials Research and Technology, Vol 30, Iss , Pp 2397-2405 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2238-7854 |
| DOI: |
10.1016/j.jmrt.2024.03.138 |
| Popis: |
In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo phase transition even when the temperature was up to 1000 °C. When under electron irradiation condition, the unconventional phase transition from β-Ga2O3 to δ-Ga2O3 occurred with a slow rate. When electron irradiation was coupled with a thermal field, the initial temperature of phase transition decreased, and the speed of phase transition also greatly accelerated. The new phase maintains crystallography relationship with the β-Ga2O3 parent phase as following: [010]β//[011‾]δ, (200)β//(2‾11)δ, and (402‾)β//(411)δ. The results reveal that electron irradiation can trigger the phase transition process from β-Ga2O3 to δ-Ga2O3, and the high temperature obviously accelerates the rate of phase transition process. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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