| Autor: |
Raya O. Jaradat, fadi R. Shahroury, Hani H. Ahmad, Ibrahim Abuishmais |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Jordanian Journal of Computers and Information Technology, Vol 8, Iss 1, Pp 98-111 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2413-9351 |
| DOI: |
10.5455/jjcit.71-1637577305 |
| Popis: |
This paper presents a design methodology for a fully integrated narrow-band low noise amplifier (LNA). To demonstrate the effectiveness of the proposed methodology, an LNA for Wi-Fi and Bluetooth standards at 2.4 GHz is conducted. The design circuity is implemented using 0.18 µm TSMC CMOS technology, however; the methodology can be equally applied to any process node. Optimum transistor sizing and biasing to achieve minimum noise figure (NF) and maximum power gain without violating the specified power budget is attained by this methodology. It also specifies the criteria for choosing the on-chip RF inductors based on the quality factor, self-resonance frequency and area. The demonstrated LNA design achieves a power gain (S21) of 22.75 dB, input return loss (S11) of 30.11 dB, reverse isolation (S12) of 60.49 dB, and output return loss (S22) equals 11.23 dB. The linearity parameters of the P1-dB compression point and IIP3 are 19 dBm and 13.5 dBm, respectively. It produces a NF of 1.75 dB while consuming 6.16 mW from a 1.8 V power supply. [JJCIT 2022; 8(1.000): 98-111] |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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