| Autor: |
T. Menold, M. Ametowobla, J. H. Werner |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 5, Pp 055212-055212-6 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0050161 |
| Popis: |
Photoluminescence spectroscopy investigates epitaxially regrown silicon single crystals after pulsed laser melting for atomic-level lattice defects. The measurements identify a transition from a regime free of defect-related spectral lines to a regime in which spectral lines appear originating from small self-interstitial clusters. This finding of self-interstitial clusters indicates supersaturated concentrations of self-interstitials within the regrown volume. Molecular dynamics simulations confirm that recrystallization velocities vre ≈ 1 m/s after laser melting lead to supersaturation of both self-interstitials and vacancies. Their concentrations ci and cv in the regrown volumes are ci ≈ cv ≈ 1017 cm−3. An analytical model based on time-dependent nucleation theory shows a very strong dependence of self-interstitial aggregation to clusters on the cooling rate after solidification. This model explains the transition identified by photoluminescence spectroscopy. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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