| Autor: |
Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Results in Physics, Vol 67, Iss , Pp 108039- (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2211-3797 |
| DOI: |
10.1016/j.rinp.2024.108039 |
| Popis: |
Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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