High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film

Autor:	Yuancheng Wang, Aiyi Qi, Yufei Wang, Hongwei Qu, Wanhua Zheng
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Lasing action in semiconductors Other optical materials Optical coatings II-VI and III-V semiconductors Optical materials Optical coatings and filters Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Electronics Letters, Vol 57, Iss 14, Pp 564-566 (2021)
Druh dokumentu:	article
ISSN:	1350-911X 0013-5194
DOI:	10.1049/ell2.12168
Popis:	Abstract Thermal effect of semiconductor lasers is the biggest challenge to the development of semiconductor lasers. This problem limits the life and performance of high‐power laser diode. In this letter, we have reduced the thermal resistance of laser to enhance its heat dissipation capability. For this, we choose aluminium nitride (AlN) to replace traditional materials as insulating layer, as well as a passivation film for facet coating. The impact of insulation layer and facet coating on the thermal rollover process is analyzed. Finite element method simulations are compared with the experimental result. The comparison shows that the thermal resistance of the laser with the new insulating layer is reduced compared with normal laser diodes (LD). Eventually, the maximum conversion efficiency is 67.5% at room temperature and thermal resistance is 1.81C° W–1.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/a3e0e0cdc49f4347a44c4a15a286a5c3 Zobrazit plný text záznamu Plný text View record in DOAJ