| Autor: |
V. V. Uglov, N. T. Kvasov, V. M. Astashynski, Yu. A. Petukhou, A. M. Kuzmitski, I. L. Doroshevich, S. B. Lastovski |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 21-25 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
Photovoltaic effect in silicon doped by the action of compression plasma pulses is investigated for the first time. Plasma treatment parameters providing maximum values of photo-emf are optimized. Dependences of photo-emf on the dose of electron high-energy post-irradiation are studied. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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