| Autor: |
Wu Qinke, Zhang Jialiang, Tang Lei, Khan Usman, Nong Huiyu, Zhao Shilong, Sun Yujie, Zheng Rongxu, Zhang Rongjie, Wang Jingwei, Tan Junyang, Yu Qiangmin, He Liqiong, Li Shisheng, Zou Xiaolong, Cheng Hui-Ming, Liu Bilu |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
National Science Open, Vol 2 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2097-1168 |
| DOI: |
10.1360/nso/20230009 |
| Popis: |
Two-dimensional (2D) semiconductors have attracted great attention to extend Moore’s law, which motivates the quest for fast growth of high-quality materials. However, taking MoS2 as an example, current methods yield 2D MoS2 with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors. Here, we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS2. The grown MoS2 has the lowest density of sulfur vacancies (~1.41×1012 cm−2) reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm2 V−1 s−1. Theoretical calculations show that by incorporating iodine, the nucleation barrier of MoS2 growth with sulfur-terminated edges reduces dramatically. The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS2 domains within seconds. This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality, which will promote their applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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