| Autor: |
Han Gyeol Lee, Yoonkoo Kim, Sangwoon Hwang, Gideok Kim, Tae Dong Kang, Minu Kim, Miyoung Kim, Tae Won Noh |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 4, Iss 12, Pp 126106-126106-7 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.4972133 |
| Popis: |
We propose a BaCeO3/BaZrO3 double-layer buffer template, grown on a SrTiO3 substrate, for epitaxial growth of a target oxide film with large lattice constants of over 4.1 Å. Lattice mismatch from the substrate was mostly accommodated for by a BaZrO3 arbitrating layer. Having an ideal in-plane lattice structure, BaCeO3 served as the main-buffer to grow the target material. We demonstrated commensurate epitaxy of BaBiO3 (BBO, a = 4.371 Å) utilizing the new buffer template. Our results can be applied to heteroepitaxy and strain engineering of novel oxide materials of sizable lattice constants. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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